Publications

2018

Gregušová, D., Blaho, M., Šichman, P., Haščík, Š., Pohorelec, O., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Wurfl, J., Hashizume, T., and Kuzmík, J.: Threshold voltage controllability and stability in InGaN/AlGaN/GaN MOS HEMTs. In: GaN Marathon 2.0. Padova 2018.

Ťapajna, M., Drobny, J., Gucmann, F., Hušeková, K., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier fixed charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures. In: Inter. Workshop on Nitride Semicond. (IWN 2018) Kanazawa 2018.

Tóth, L., Cora, I., Fogarassy, Z., Pécz, B., Hasenöhrl, S., Seifertova, A., and Kuzmík, J.: TEM study of InGaN/AlGaN/GaN normally-off MOS HEMT structures. In: Inter. Workshop on Nitride Semicond. (IWN 2018) Kanazawa 2018.

Gregušová, D., Hasenöhrl, S., Stoklas, R., Haščík, Š., Pohorelec, O., Seifertová, A., Blaho, M., Laurenčíková, A., Tóth, L., Pécz, B., and Kuzmík, J.: InGaN/AlGaN/GaN normally-off MOS HEMT with etched access region. In: Inter. Workshop on Nitride Semicond. (IWN 2018) Kanazawa 2018.

B. Pécz, L. Tóth, I. Cora, M Ťapajna, K. Fröhlich, J. Kuzmík: Structural study of Al₂O₃ dielectric films deposited by ALD onto AlGaN/GaN heterostructure, EMRS 2018, Warsaw, September 17-18, 2018.

J. Kuzmík, GaN-based normally-off HEMTs for switching and logic applications, ISPlasma2019/IC-PLANTS2019, Nagoya Institute of Technology, March 17-21, 2019, Invited.

2017

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407.

M. Matys, R. Stoklas, M. Blaho, and B. Adamowicz: Origin of positive charge at insulator/AlGaN interface and its control by AlGaN composition, Applied Phys. Lett. 110 (2017) 243505.

Kuzmík, J.: GaN-based normally-off HEMTs for switching and logic applications. In 3^rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3). Tohoku Univ. 2017. Invited.

Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Current Understanding and Challenges of Metal-Oxide-Semiconductor Gated GaN HFETs. In: 6^th Inter.Symp. Organic Inorganic Electronic Mater. Related Nanotechnol. - EM-NANO 2017. Fukui 2017. Invited.

Dobročka, E., Hasenöhrl, S., Chauhan, P., and Kuzmík, J.: Non-conventional scans in highresolution X-ray diffraction analysis of epitaxial systems. In: 5^th Inter. Conf. "Progress in Applied Surface, Interface and Thin Film Science - Solar Renewable Energy News " (SURFINT-SREN V). Florence 2017. Invited.

Gregušová, D., Blaho, M., Šichman, P., Haščík, Š., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Würfl, J., Hashizume, T., and Kuzmík, J.: Threshold voltage controllability and stability in InGaN/AlGaN/GaN MOS HEMTs. In: 12^th Topical Workshop on Heterostr. Microelectron. Kirishima 2017.

M. Matys, S. Kaneki, B. Adamowicz, J. Kuzmík and T. Hashizume: Analysis of temperature dependent frequency dispersion in CV curves of Al₂O₃/AlGaN/GaN structures on the disorder-induced gap-state model,In: 12^th Topical Workshop on Heterostr. Microelectron. Kirishima 2017.

L. Tóth, I. Cora, M. Ťapajna, K. Fröhlich, J. Kuzmík and B. Pécz: TEM study of dielectric films deposited on the surface of GaN/AlGaN/GaN MOS heterostructure, In: 12^th Topical Workshop on Heterostr. Microelectron. Kirishima 2017.

Hasenöhrl, S., Gregušová, D., Dobročka, E., Stoklas, R., Chauhan, P., and Kuzmík, J.: MOCVD growth of GaN/AlGaN 2 DEG structures with InGaN cap for examination of polarization charge engineering concept in normally - off GaN MOS-HEMTs. In: 17^th European Workshop on Metal-Organic Vapour Phase Epitaxy (EW-MOVPE 17). Grenoble 2017.

M. Matys and B. Adamowicz: Mechanism of yellow luminescence in GaN at room temperature, J. Applied Phys. 121, 065104 (2017).

Matys, M., Stoklas, R., Kuzmík, J., Adamowicz, J., Yatabe, Z., and Hashizume, T.: Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures, J. Applied Phys. 119 (2016) 205304.

D. Gregušová, M. Blaho, Š. Haščík, A. Seifertová, A. Laurenčíková, J. Dérer, F. Brunner, J. Wurfl, and J. Kuzmík: Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. WOCSDICE 2016, Aveiro, Portugal, June 6-10, 2016.

Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al₂O₃ gate dielectric–correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

Matys, M., Kaneki, S., Adamowicz, B., Kuzmík, J., and Hashizume, T.: Characterization of interface states from frequency dispersion in capacitance-voltage curves of Al₂O₃/AlGaN/GaN heterostructures. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al₂O₃ gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., and Kuzmík, J.: Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al₂O₃ gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., and Kuzmík, J.: Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al₂O₃ gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

Matys, M., Adamowicz, J., Domanowska, A., Michalewicz, A., Stoklas, R., Akazawa, M., Yatabe, Z., and Hashizume, T.: On the origin of interface states at oxide/III-nitride heterojunction interfaces, J. Applied Phys. 119 (2016) 225305.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al₂O₃ gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.